STGW30N120KD

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Current - Collector Pulsed (Icm) :

100A

Collector Emitter Voltage (VCEO) :

1.2kV

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Base Part Number :

STGW30

Switching Energy :

2.4mJ (on), 4.3mJ (off)

Test Condition :

960V, 20A, 10 Ω, 15V

Number of Terminations :

3

JEDEC-95 Code :

TO-247AC

Turn Off Time-Nom (toff) :

756 ns

JESD-30 Code :

R-PSFM-T3

Turn On Time :

57 ns

Package / Case :

TO-247-3

Polarity/Channel Type :

N-Channel

Collector Emitter Breakdown Voltage :

1.2kV

Gate-Emitter Thr Voltage-Max :

5.75V

Mounting Type :

Through Hole

Voltage - Collector Emitter Breakdown (Max) :

1200V

Element Configuration :

Single

Radiation Hardening :

No

Series :

PowerMESH™

Power - Max :

220W

Operating Temperature :

-55°C~125°C TJ

Max Power Dissipation :

220W

Vce(on) (Max) @ Vge, Ic :

3.85V @ 15V, 20A

ECCN Code :

EAR99

Input Type :

Standard

Gate-Emitter Voltage-Max :

25V

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

60A

Transistor Application :

Motor Control

Reverse Recovery Time :

84 ns

Gate Charge :

105nC

Pin Count :

3

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Number of Elements :

1

Td (on/off) @ 25°C :

36ns/251ns