STGW30H60DF
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- Mfr.Part #
- STGW30H60DF
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 600V 60A 260W TO247
- Stock
- 5,405
- In Stock ：
- 5,405
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - IGBTs - Single
- Collector Emitter Saturation Voltage :
- 1.55V
- Gate Charge :
- 149nC
- Test Condition :
- 400V, 30A, 10 Ω, 15V
- Factory Lead Time :
- 20 Weeks
- Weight :
- 38.000013g
- Input Type :
- Standard
- Power - Max :
- 260W
- Height :
- 20.15mm
- Mounting Type :
- Through Hole
- Switching Energy :
- 383μJ (on), 293μJ (off)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~175°C TJ
- Max Collector Current :
- 60A
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Vce(on) (Max) @ Vge, Ic :
- 2V @ 15V, 30A
- Current - Collector Pulsed (Icm) :
- 120A
- Width :
- 5.15mm
- Td (on/off) @ 25°C :
- 37ns/146ns
- Package / Case :
- TO-247-3
- Length :
- 15.75mm
- Collector Emitter Breakdown Voltage :
- 600V
- Mount :
- Through Hole
- IGBT Type :
- Trench Field Stop
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Reverse Recovery Time :
- 53 ns
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 600V
- Max Power Dissipation :
- 260W
- Base Part Number :
- STGW30
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tube
- Datasheets
- STGW30H60DF
STGW30H60DFB datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at
STGW30H60DFB Description
These devices are IGBTs developed using an advanced proprietary trench gate field stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in a safer paralleling operation.
STGW30H60DFB Features
Maximum junction temperature: TJ = 175 °C
High-speed switching series
Minimized tail current
Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A
Tight parameter distribution
Safe paralleling
Positive VCE(sat) temperature coefficient
Low thermal resistance
Very fast soft recovery antiparallel diode
STGW30H60DFB Applications
Photovoltaic inverters
High-frequency converters
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