STGW25M120DF3
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- Mfr.Part #
- STGW25M120DF3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 1200V 50A 375W
- Stock
- 10,837
- In Stock ：
- 10,837
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - IGBTs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate Charge :
- 85nC
- Package / Case :
- TO-247-3
- Current - Collector Pulsed (Icm) :
- 100A
- Collector Emitter Voltage (VCEO) :
- 1.2kV
- Element Configuration :
- Single
- Test Condition :
- 600V, 25A, 15 Ω, 15V
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Reverse Recovery Time :
- 265 ns
- Gate-Emitter Thr Voltage-Max :
- 7V
- Operating Temperature :
- -55°C~175°C TJ
- Max Power Dissipation :
- 375W
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- IGBT Type :
- Trench Field Stop
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Factory Lead Time :
- 30 Weeks
- Weight :
- 38.000013g
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- STGW25
- Power - Max :
- 375W
- Gate-Emitter Voltage-Max :
- 20V
- Td (on/off) @ 25°C :
- 28ns/150ns
- Switching Energy :
- 850μJ (on), 1.3mJ (off)
- Vce(on) (Max) @ Vge, Ic :
- 2.3V @ 15V, 25A
- Collector Emitter Saturation Voltage :
- 1.85V
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 50A
- Input Type :
- Standard
- Number of Pins :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Polarity/Channel Type :
- N-Channel
- Datasheets
- STGW25M120DF3
STGW25M120DF3 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at
Description
The STGW25M120DF3 is a 1200 V, 25 A, low-loss M series Trench gate field-stop IGBT in a TO-247 package. This STGW25M120DF3 device is an IGBT with a trench gate field stop construction developed in-house. The device is part of the M series of IGBTs, which provide an ideal blend of inverter system performance and efficiency in applications where low-loss and short-circuit functionality are critical. Furthermore, the narrow parameter distribution and positive VCE(sat) temperature coefficient result in a safer paralleling operation.
Features
? Tight parameter distribution
? Positive VCE(sat) temperature coefficient
? Low thermal resistance
? Soft- and fast-recovery antiparallel diode
? Maximum junction temperature: TJ = 175 °C
? 10 μs of short-circuit withstand time
? Low VCE(sat) = 1.85 V (typ.) @ IC = 25 A
Applications
? Solar
? Welding
? Industrial drives
? UPS
? Consumer electronics
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