STGW25H120DF2

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Mfr.Part #
STGW25H120DF2
Manufacturer
STMicroelectronics
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT H-SERIES 1200V 25A TO-247
Stock
59
In Stock :
59

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - IGBTs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vce(on) (Max) @ Vge, Ic :
2.6V @ 15V, 25A
Factory Lead Time :
32 Weeks
Switching Energy :
600μJ (on), 700μJ (off)
Collector Emitter Breakdown Voltage :
1.2kV
IGBT Type :
Trench Field Stop
ECCN Code :
EAR99
Lifecycle Status :
ACTIVE (Last Updated: 7 months ago)
Max Power Dissipation :
375W
Mounting Type :
Through Hole
Power - Max :
375W
Contact Plating :
Tin
RoHS Status :
ROHS3 Compliant
Td (on/off) @ 25°C :
29ns/130ns
Packaging :
Tube
Base Part Number :
STGW25
Number of Pins :
3
Reverse Recovery Time :
303 ns
Gate Charge :
100nC
Element Configuration :
Single
Current - Collector Pulsed (Icm) :
100A
Weight :
38.000013g
Input Type :
Standard
Voltage - Collector Emitter Breakdown (Max) :
1200V
Test Condition :
600V, 25A, 10 Ω, 15V
Max Collector Current :
50A
Operating Temperature :
-55°C~175°C TJ
Mount :
Through Hole
Collector Emitter Saturation Voltage :
2.1V
Package / Case :
TO-247-3
Collector Emitter Voltage (VCEO) :
1.2kV
Datasheets
STGW25H120DF2
Introducing Transistors - IGBTs - Single STMicroelectronics STGW25H120DF2 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Base Part Number:STGW25, Number of Pins:3, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-247-3, STGW25H120DF2 pinout, STGW25H120DF2 datasheet PDF, STGW25H120DF2 amp .Beyond Transistors - IGBTs - Single STMicroelectronics STGW25H120DF2 ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STGW25H120DF2


STGW25H120DF2 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at

STGW25H120DF2 Description


STGW25H120DF2 is a member of the H series of IGBTs utilizing an advanced proprietary trench gate and field stop structure. Its ability to deliver low conduction and switching losses makes this device able to maximize the efficiency of any frequency converter. Safer paralleling operation can be ensured based on a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution. It is supplied in the TO-247 package to save board space. 



STGW25H120DF2 Features


Low conduction and switching losses

A slightly positive VCE(sat) temperature coefficient 

Very tight parameter distribution

Supplied in the TO-247 package

High-speed switching series



STGW25H120DF2 Applications


Uninterruptible power supply

Welding machines

Photovoltaic inverters

Power factor correction

High-frequency converters


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