STGW20V60F
- Mfr.Part #
- STGW20V60F
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 600V 40A 167W TO247
- Stock
- 75
- In Stock :
- 75
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - IGBTs - Single
- Pin Count :
- 3
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Polarity/Channel Type :
- N-Channel
- Td (on/off) @ 25°C :
- 38ns/149ns
- Vce(on) (Max) @ Vge, Ic :
- 2.2V @ 15V, 20A
- Width :
- 5.15mm
- Length :
- 15.75mm
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- IGBT Type :
- Trench Field Stop
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Power Dissipation :
- 167W
- Gate Charge :
- 116nC
- Packaging :
- Tube
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 600V
- Switching Energy :
- 200μJ (on), 130μJ (off)
- Input Type :
- Standard
- Number of Pins :
- 3
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-247-3
- Element Configuration :
- Single
- Turn Off Time-Nom (toff) :
- 173 ns
- Test Condition :
- 400V, 20A, 15V
- Max Collector Current :
- 40A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Finish :
- Matte Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 600V
- Max Power Dissipation :
- 167W
- Current - Collector Pulsed (Icm) :
- 80A
- Factory Lead Time :
- 20 Weeks
- Height :
- 20.15mm
- Base Part Number :
- STGW20
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Turn On Time :
- 49 ns
- Collector Emitter Saturation Voltage :
- 2.3V
- Transistor Application :
- POWER CONTROL
- Datasheets
- STGW20V60F

STGW20V60F datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at
STGW20V60F Description
This STGW20V60F is an IGBT developed using an advanced proprietary trench gate field-stop structure. The transistor STGW20V60F is a part of the V series IGBTs, representing an optimum compromise between conduction and switching losses to maximize the efficiency of high-frequency converters. Furthermore, the positive VcE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling.
STGW20V60F Features
Maximum junction temperature: Tj= 175 °C
Tail-less switching off
VcE(sat)= 1.8V (typ.)@lc= 20 A
Tight parameter distribution
Safe paralleling
Low thermal resistance
STGW20V60F Applications
Photovoltaic inverters
Uninterruptible power supply
Welding
Power factor correction
Very high-frequency converters
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