STFILED524
- Mfr.Part #
- STFILED524
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-262-3 Full Pack, I2Pak
- Datasheet
- Download
- Description
- MOSFET N-CH 525V 4A I2PAKFP
- Stock
- 48,837
- In Stock :
- 48,837
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 525V
- Rise Time :
- 7ns
- Case Connection :
- Isolated
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 3
- Rds On (Max) @ Id, Vgs :
- 2.6 Ω @ 2.2A, 10V
- Packaging :
- Tube
- Turn On Delay Time :
- 8 ns
- JEDEC-95 Code :
- TO-281
- Current - Continuous Drain (Id) @ 25°C :
- 4A Tc
- Mounting Type :
- Through Hole
- Package / Case :
- TO-262-3 Full Pack, I2Pak
- Base Part Number :
- STFILE
- Turn-Off Delay Time :
- 21 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 340pF @ 100V
- Radiation Hardening :
- No
- Terminal Position :
- Single
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 42 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 10V
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Mount :
- Through Hole
- Power Dissipation-Max :
- 20W Tc
- DS Breakdown Voltage-Min :
- 525V
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 4A
- Fall Time (Typ) :
- 14 ns
- Drain Current-Max (Abs) (ID) :
- 4A
- Avalanche Energy Rating (Eas) :
- 110 mJ
- Gate to Source Voltage (Vgs) :
- 30V
- Datasheets
- STFILED524

N-Channel Tube 2.6 Ω @ 2.2A, 10V ±30V 340pF @ 100V 12nC @ 10V 525V TO-262-3 Full Pack, I2Pak
STFILED524 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 110 mJ.A device's maximal input capacitance is 340pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 4A, which represents the maximum continuous current it can conduct.In this device, the drain current is 4A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 21 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 525V.This transistor requires a 525V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
STFILED524 Features
the avalanche energy rating (Eas) is 110 mJ
a continuous drain current (ID) of 4A
the turn-off delay time is 21 ns
a 525V drain to source voltage (Vdss)
STFILED524 Applications
There are a lot of STMicroelectronics
STFILED524 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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