STFI10N65K3

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Mfr.Part #
STFI10N65K3
Manufacturer
STMicroelectronics
Package / Case
TO-262-3 Full Pack, I2Pak
Datasheet
Download
Description
MOSFET N-CH 650V 10A I2PAKFP
Stock
7,115
In Stock :
7,115

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Fall Time (Typ) :
35 ns
Turn-Off Delay Time :
44 ns
Gate to Source Voltage (Vgs) :
30V
Element Configuration :
Single
Current - Continuous Drain (Id) @ 25°C :
10A Tc
Radiation Hardening :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~150°C TJ
Gate Charge (Qg) (Max) @ Vgs :
42nC @ 10V
Continuous Drain Current (ID) :
10A
Packaging :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation-Max :
35W Tc
FET Type :
N-Channel
Number of Pins :
3
Base Part Number :
STFI10N
Drain to Source Breakdown Voltage :
650V
Mount :
Through Hole
Power Dissipation :
35W
Mounting Type :
Through Hole
Rise Time :
14ns
RoHS Status :
ROHS3 Compliant
Rds On (Max) @ Id, Vgs :
1 Ω @ 3.6A, 10V
Vgs (Max) :
±30V
Series :
SuperMESH3™
Turn On Delay Time :
14.5 ns
ECCN Code :
EAR99
Input Capacitance (Ciss) (Max) @ Vds :
1180pF @ 25V
Package / Case :
TO-262-3 Full Pack, I2Pak
Vgs(th) (Max) @ Id :
4.5V @ 100μA
Datasheets
STFI10N65K3
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STFI10N65K3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Base Part Number:STFI10N, Mounting Type:Through Hole, Package / Case:TO-262-3 Full Pack, I2Pak, STFI10N65K3 pinout, STFI10N65K3 datasheet PDF, STFI10N65K3 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STFI10N65K3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STFI10N65K3


N-Channel Tube 1 Ω @ 3.6A, 10V ±30V 1180pF @ 25V 42nC @ 10V TO-262-3 Full Pack, I2Pak

STFI10N65K3 Overview


The maximum input capacitance of this device is 1180pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 10A.When VGS=650V, and ID flows to VDS at 650VVDS, the drain-source breakdown voltage is 650V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 44 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 14.5 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.

STFI10N65K3 Features


a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 44 ns


STFI10N65K3 Applications


There are a lot of STMicroelectronics
STFI10N65K3 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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