STFI10N65K3
- Mfr.Part #
- STFI10N65K3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-262-3 Full Pack, I2Pak
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 10A I2PAKFP
- Stock
- 7,115
- In Stock :
- 7,115
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 35 ns
- Turn-Off Delay Time :
- 44 ns
- Gate to Source Voltage (Vgs) :
- 30V
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 42nC @ 10V
- Continuous Drain Current (ID) :
- 10A
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 35W Tc
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Base Part Number :
- STFI10N
- Drain to Source Breakdown Voltage :
- 650V
- Mount :
- Through Hole
- Power Dissipation :
- 35W
- Mounting Type :
- Through Hole
- Rise Time :
- 14ns
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 1 Ω @ 3.6A, 10V
- Vgs (Max) :
- ±30V
- Series :
- SuperMESH3™
- Turn On Delay Time :
- 14.5 ns
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 1180pF @ 25V
- Package / Case :
- TO-262-3 Full Pack, I2Pak
- Vgs(th) (Max) @ Id :
- 4.5V @ 100μA
- Datasheets
- STFI10N65K3

N-Channel Tube 1 Ω @ 3.6A, 10V ±30V 1180pF @ 25V 42nC @ 10V TO-262-3 Full Pack, I2Pak
STFI10N65K3 Overview
The maximum input capacitance of this device is 1180pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 10A.When VGS=650V, and ID flows to VDS at 650VVDS, the drain-source breakdown voltage is 650V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 44 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 14.5 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
STFI10N65K3 Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 44 ns
STFI10N65K3 Applications
There are a lot of STMicroelectronics
STFI10N65K3 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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