STFI13NK60Z

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

13A

Number of Elements :

1

Transistor Application :

SWITCHING

Power Dissipation-Max :

35W Tc

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

92nC @ 10V

FET Type :

N-Channel

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Transistor Element Material :

SILICON

Packaging :

Tube

Package / Case :

TO-262-3 Full Pack, I2Pak

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

52A

Drain-source On Resistance-Max :

0.55Ohm

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

600V

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Input Capacitance (Ciss) (Max) @ Vds :

2030pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

22 ns

Gate to Source Voltage (Vgs) :

30V

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Series :

SuperMESH™

Case Connection :

Isolated

Mount :

Through Hole

Rise Time :

14ns

Avalanche Energy Rating (Eas) :

400 mJ

Number of Terminations :

3

Power Dissipation :

35W

Turn-Off Delay Time :

61 ns

Rds On (Max) @ Id, Vgs :

550m Ω @ 4.5A, 10V

Fall Time (Typ) :

21 ns

Base Part Number :

STFI13N

Vgs (Max) :

±30V

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

Not Applicable

Pin Count :

3

Operating Temperature :

-55°C~150°C TJ