STFI10NK60Z

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Matte Tin (Sn) - annealed

Continuous Drain Current (ID) :

10A

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

RoHS Status :

ROHS3 Compliant

Series :

SuperMESH™

Base Part Number :

STFI10N

Turn On Delay Time :

20 ns

Case Connection :

Isolated

Mount :

Through Hole

Turn-Off Delay Time :

55 ns

Drain-source On Resistance-Max :

0.75Ohm

Fall Time (Typ) :

30 ns

Power Dissipation-Max :

35W Tc

Power Dissipation :

35W

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

600V

Mounting Type :

Through Hole

Number of Pins :

3

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1370pF @ 25V

Package / Case :

TO-262-3 Full Pack, I2Pak

Radiation Hardening :

No

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate to Source Voltage (Vgs) :

30V

Rds On (Max) @ Id, Vgs :

750m Ω @ 4.5A, 10V

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±30V

Terminal Position :

Single

ECCN Code :

EAR99

Rise Time :

20ns

Number of Terminations :

3

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Packaging :

Tube

Transistor Application :

SWITCHING