STFI11N65M2
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- Mfr.Part #
- STFI11N65M2
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-262-3 Full Pack, I2Pak
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 7A I2PAKFP
- Stock
- 9,455
- In Stock ：
- 9,455
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 410pF @ 100V
- FET Type :
- N-Channel
- Resistance :
- 600mOhm
- REACH SVHC :
- No SVHC
- Gate to Source Voltage (Vgs) :
- 25V
- Number of Channels :
- 1
- Base Part Number :
- STFI11N
- Package / Case :
- TO-262-3 Full Pack, I2Pak
- Rise Time :
- 7.5ns
- Current - Continuous Drain (Id) @ 25°C :
- 7A Tc
- RoHS Status :
- ROHS3 Compliant
- Threshold Voltage :
- 3V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Continuous Drain Current (ID) :
- 7A
- Fall Time (Typ) :
- 15 ns
- Power Dissipation-Max :
- 25W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Vgs (Max) :
- ±25V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Tube
- Turn-Off Delay Time :
- 26 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Weight :
- 2.240009g
- Rds On (Max) @ Id, Vgs :
- 670m Ω @ 3.5A, 10V
- Mounting Type :
- Through Hole
- Turn On Delay Time :
- 9.5 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 12.5nC @ 10V
- Drain to Source Breakdown Voltage :
- 650V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Mount :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Series :
- MDmesh™ II Plus
- Datasheets
- STFI11N65M2
N-Channel Tube 670m Ω @ 3.5A, 10V ±25V 410pF @ 100V 12.5nC @ 10V TO-262-3 Full Pack, I2Pak
STFI11N65M2 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 410pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 7A amps.In this device, the drain-source breakdown voltage is 650V and VGS=650V, so the drain-source breakdown voltage is 650V in this case.It is [26 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 9.5 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 3V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
STFI11N65M2 Features
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 26 ns
a threshold voltage of 3V
STFI11N65M2 Applications
There are a lot of STMicroelectronics
STFI11N65M2 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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