STFI13N65M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.43Ohm

JEDEC-95 Code :

TO-281

Pulsed Drain Current-Max (IDM) :

40A

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Number of Terminations :

3

JESD-30 Code :

R-PSFM-T3

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

430m Ω @ 5A, 10V

Drain to Source Voltage (Vdss) :

650V

Vgs (Max) :

±25V

Series :

MDmesh™ M2

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Avalanche Energy Rating (Eas) :

350 mJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Base Part Number :

STFI13N

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Package / Case :

TO-262-3 Full Pack, I2Pak

Operating Temperature :

150°C TJ

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

10A

Number of Elements :

1

DS Breakdown Voltage-Min :

650V

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

590pF @ 100V

Packaging :

Tube

FET Type :

N-Channel

Case Connection :

Isolated

Power Dissipation-Max :

25W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE