STFI7N80K5
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- Mfr.Part #
- STFI7N80K5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-262-3 Full Pack, I2Pak
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 6A I2PAKFP
- Stock
- 12,281
- In Stock ：
- 12,281
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±30V
- Power Dissipation-Max :
- 25W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Breakdown Voltage :
- 800V
- Package / Case :
- TO-262-3 Full Pack, I2Pak
- Mounting Type :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 6A
- Width :
- 4.6mm
- Lead Free :
- Lead Free
- Series :
- SuperMESH5™
- Base Part Number :
- STFI7
- Fall Time (Typ) :
- 20.2 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 360pF @ 100V
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Weight :
- 2.240009g
- Turn-Off Delay Time :
- 23.7 ns
- Packaging :
- Tube
- Gate to Source Voltage (Vgs) :
- 30V
- Turn On Delay Time :
- 11.3 ns
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 13.4nC @ 10V
- Vgs(th) (Max) @ Id :
- 5V @ 100µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 6A Tc
- Rise Time :
- 8.3ns
- Rds On (Max) @ Id, Vgs :
- 1.2 Ω @ 3A, 10V
- Number of Channels :
- 1
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Length :
- 10.4mm
- Height :
- 10.85mm
- Datasheets
- STFI7N80K5
N-Channel Tube 1.2 Ω @ 3A, 10V ±30V 360pF @ 100V 13.4nC @ 10V TO-262-3 Full Pack, I2Pak
STFI7N80K5 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 360pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 6A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=800V. And this device has 800V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 23.7 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 11.3 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.By using drive voltage (10V), this device helps reduce its overall power consumption.
STFI7N80K5 Features
a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 23.7 ns
STFI7N80K5 Applications
There are a lot of STMicroelectronics
STFI7N80K5 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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