STFI6N65K3
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- Mfr.Part #
- STFI6N65K3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-262-3 Full Pack, I2Pak
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 5.4A I2PAKFP
- Stock
- 500
- In Stock ：
- 500
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±30V
- Gate to Source Voltage (Vgs) :
- 30V
- Rds On (Max) @ Id, Vgs :
- 1.3 Ω @ 2.7A, 10V
- Turn On Delay Time :
- 14 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 33nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn-Off Delay Time :
- 44 ns
- Current - Continuous Drain (Id) @ 25°C :
- 5.4A Tc
- Element Configuration :
- Single
- Rise Time :
- 10ns
- Mounting Type :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 880pF @ 50V
- Package / Case :
- TO-262-3 Full Pack, I2Pak
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Power Dissipation-Max :
- 30W Tc
- Series :
- SuperMESH3™
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 5.4A
- Radiation Hardening :
- No
- FET Type :
- N-Channel
- Mount :
- Through Hole
- Packaging :
- Tube
- Fall Time (Typ) :
- 24 ns
- Operating Temperature :
- 150°C TJ
- Drain to Source Breakdown Voltage :
- 650V
- Base Part Number :
- STFI6N
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 30W
- Datasheets
- STFI6N65K3
N-Channel Tube 1.3 Ω @ 2.7A, 10V ±30V 880pF @ 50V 33nC @ 10V TO-262-3 Full Pack, I2Pak
STFI6N65K3 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 880pF @ 50V.This device conducts a continuous drain current (ID) of 5.4A, which is the maximum continuous current transistor can conduct.Using VGS=650V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 650V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 44 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 14 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
STFI6N65K3 Features
a continuous drain current (ID) of 5.4A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 44 ns
STFI6N65K3 Applications
There are a lot of STMicroelectronics
STFI6N65K3 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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