STFI6N62K3
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- Mfr.Part #
- STFI6N62K3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-262-3 Full Pack, I2Pak
- Datasheet
- Download
- Description
- MOSFET N CH 620V 5.5A I2PAKFP
- Stock
- 6,096
- In Stock ：
- 6,096
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 5.5A Tc
- Operating Temperature :
- 150°C TJ
- Continuous Drain Current (ID) :
- 5.5A
- Base Part Number :
- STFI6N
- Gate Charge (Qg) (Max) @ Vgs :
- 34nC @ 10V
- Radiation Hardening :
- No
- Turn-Off Delay Time :
- 49 ns
- Rds On (Max) @ Id, Vgs :
- 1.2 Ω @ 2.8A, 10V
- Fall Time (Typ) :
- 20 ns
- Package / Case :
- TO-262-3 Full Pack, I2Pak
- Power Dissipation-Max :
- 30W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Series :
- SuperMESH3™
- Mounting Type :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Pins :
- 3
- Gate to Source Voltage (Vgs) :
- 30V
- Drain to Source Breakdown Voltage :
- 620V
- Turn On Delay Time :
- 22 ns
- Mount :
- Through Hole
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Vgs (Max) :
- ±30V
- Rise Time :
- 12ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 875pF @ 50V
- FET Type :
- N-Channel
- Power Dissipation :
- 30W
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Datasheets
- STFI6N62K3
N-Channel Tube 1.2 Ω @ 2.8A, 10V ±30V 875pF @ 50V 34nC @ 10V TO-262-3 Full Pack, I2Pak
STFI6N62K3 Overview
A device's maximum input capacitance is 875pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 5.5A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=620V, and this device has a drain-to-source breakdown voltage of 620V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 49 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 22 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STFI6N62K3 Features
a continuous drain current (ID) of 5.5A
a drain-to-source breakdown voltage of 620V voltage
the turn-off delay time is 49 ns
STFI6N62K3 Applications
There are a lot of STMicroelectronics
STFI6N62K3 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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