STFI5N95K3

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Mfr.Part #
STFI5N95K3
Manufacturer
STMicroelectronics
Package / Case
TO-262-3 Full Pack, I2Pak
Datasheet
Download
Description
MOSFET N-CH 950V 4A I2PAKFP
Stock
695
In Stock :
695

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Gate to Source Voltage (Vgs) :
30V
Package / Case :
TO-262-3 Full Pack, I2Pak
Current - Continuous Drain (Id) @ 25°C :
4A Tc
Turn-Off Delay Time :
32 ns
Gate Charge (Qg) (Max) @ Vgs :
19nC @ 10V
Vgs(th) (Max) @ Id :
5V @ 100µA
RoHS Status :
ROHS3 Compliant
Mounting Type :
Through Hole
Packaging :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
ECCN Code :
EAR99
Base Part Number :
STFI5N
Turn On Delay Time :
17 ns
Input Capacitance (Ciss) (Max) @ Vds :
460pF @ 25V
Element Configuration :
Single
Continuous Drain Current (ID) :
4A
Vgs (Max) :
±30V
Number of Pins :
3
FET Type :
N-Channel
Mount :
Through Hole
Drain to Source Breakdown Voltage :
950V
Rds On (Max) @ Id, Vgs :
3.5 Ω @ 2A, 10V
Series :
SuperMESH3™
Operating Temperature :
-55°C~150°C TJ
Radiation Hardening :
No
Fall Time (Typ) :
18 ns
Rise Time :
7ns
Power Dissipation-Max :
25W Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Datasheets
STFI5N95K3
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STFI5N95K3 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-262-3 Full Pack, I2Pak, Mounting Type:Through Hole, Base Part Number:STFI5N, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, STFI5N95K3 pinout, STFI5N95K3 datasheet PDF, STFI5N95K3 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STFI5N95K3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STFI5N95K3


N-Channel Tube 3.5 Ω @ 2A, 10V ±30V 460pF @ 25V 19nC @ 10V TO-262-3 Full Pack, I2Pak

STFI5N95K3 Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 460pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 4A amps.In this device, the drain-source breakdown voltage is 950V and VGS=950V, so the drain-source breakdown voltage is 950V in this case.It is [32 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 17 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.A device like this reduces its overall power consumption when it uses drive voltage (10V).

STFI5N95K3 Features


a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of 950V voltage
the turn-off delay time is 32 ns


STFI5N95K3 Applications


There are a lot of STMicroelectronics
STFI5N95K3 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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