STFI34NM60N

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Mfr.Part #
STFI34NM60N
Manufacturer
STMicroelectronics
Package / Case
TO-262-3 Full Pack, I2Pak
Datasheet
Download
Description
MOSFET N-CH 600V 29A I2PAKFP
Stock
47,176
In Stock :
47,176

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Radiation Hardening :
No
Series :
MDmesh™ II
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
Not Applicable
Gate Charge (Qg) (Max) @ Vgs :
84nC @ 10V
Drain to Source Breakdown Voltage :
600V
Fall Time (Typ) :
70 ns
Packaging :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
10V
Vgs (Max) :
±25V
Number of Pins :
3
Base Part Number :
STFI34N
Vgs(th) (Max) @ Id :
4V @ 250µA
Turn On Delay Time :
17 ns
Gate to Source Voltage (Vgs) :
25V
Current - Continuous Drain (Id) @ 25°C :
29A Tc
Power Dissipation :
40W
Turn-Off Delay Time :
106 ns
Mount :
Through Hole
FET Type :
N-Channel
Package / Case :
TO-262-3 Full Pack, I2Pak
Rds On (Max) @ Id, Vgs :
105m Ω @ 14.5A, 10V
Power Dissipation-Max :
40W Tc
Continuous Drain Current (ID) :
29A
Operating Temperature :
150°C TJ
Input Capacitance (Ciss) (Max) @ Vds :
2722pF @ 100V
RoHS Status :
ROHS3 Compliant
Rise Time :
34ns
Mounting Type :
Through Hole
Datasheets
STFI34NM60N
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STFI34NM60N from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Base Part Number:STFI34N, Package / Case:TO-262-3 Full Pack, I2Pak, Operating Temperature:150°C TJ, Mounting Type:Through Hole, STFI34NM60N pinout, STFI34NM60N datasheet PDF, STFI34NM60N amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STFI34NM60N ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STFI34NM60N


N-Channel Tube 105m Ω @ 14.5A, 10V ±25V 2722pF @ 100V 84nC @ 10V TO-262-3 Full Pack, I2Pak

STFI34NM60N Overview


A device's maximal input capacitance is 2722pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 29A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 106 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 17 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 25V volts.This device reduces its overall power consumption by using drive voltage (10V).

STFI34NM60N Features


a continuous drain current (ID) of 29A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 106 ns


STFI34NM60N Applications


There are a lot of STMicroelectronics
STFI34NM60N applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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