STFI34NM60N
- Mfr.Part #
- STFI34NM60N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-262-3 Full Pack, I2Pak
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 29A I2PAKFP
- Stock
- 47,176
- In Stock :
- 47,176
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Radiation Hardening :
- No
- Series :
- MDmesh™ II
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Gate Charge (Qg) (Max) @ Vgs :
- 84nC @ 10V
- Drain to Source Breakdown Voltage :
- 600V
- Fall Time (Typ) :
- 70 ns
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±25V
- Number of Pins :
- 3
- Base Part Number :
- STFI34N
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Turn On Delay Time :
- 17 ns
- Gate to Source Voltage (Vgs) :
- 25V
- Current - Continuous Drain (Id) @ 25°C :
- 29A Tc
- Power Dissipation :
- 40W
- Turn-Off Delay Time :
- 106 ns
- Mount :
- Through Hole
- FET Type :
- N-Channel
- Package / Case :
- TO-262-3 Full Pack, I2Pak
- Rds On (Max) @ Id, Vgs :
- 105m Ω @ 14.5A, 10V
- Power Dissipation-Max :
- 40W Tc
- Continuous Drain Current (ID) :
- 29A
- Operating Temperature :
- 150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 2722pF @ 100V
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 34ns
- Mounting Type :
- Through Hole
- Datasheets
- STFI34NM60N

N-Channel Tube 105m Ω @ 14.5A, 10V ±25V 2722pF @ 100V 84nC @ 10V TO-262-3 Full Pack, I2Pak
STFI34NM60N Overview
A device's maximal input capacitance is 2722pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 29A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 106 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 17 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 25V volts.This device reduces its overall power consumption by using drive voltage (10V).
STFI34NM60N Features
a continuous drain current (ID) of 29A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 106 ns
STFI34NM60N Applications
There are a lot of STMicroelectronics
STFI34NM60N applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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