STFI34N65M5
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- Mfr.Part #
- STFI34N65M5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-262-3 Full Pack, I2Pak
- Datasheet
- Download
- Description
- MOSFET N CH 650V 28A I2PAKFP
- Stock
- 1,492
- In Stock ：
- 1,492
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 10.85mm
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Vgs (Max) :
- ±25V
- Lead Free :
- Lead Free
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 2700pF @ 100V
- Power Dissipation :
- 34.7W
- Turn-Off Delay Time :
- 12 ns
- Base Part Number :
- STFI34N
- Number of Pins :
- 3
- Length :
- 10.4mm
- Rds On (Max) @ Id, Vgs :
- 110m Ω @ 14A, 10V
- Operating Temperature :
- 150°C TJ
- Width :
- 4.6mm
- Power Dissipation-Max :
- 35W Tc
- Turn On Delay Time :
- 59 ns
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 28A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Breakdown Voltage :
- 650V
- Continuous Drain Current (ID) :
- 28A
- Package / Case :
- TO-262-3 Full Pack, I2Pak
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Mount :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 25V
- Series :
- MDmesh™ V
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 62.5nC @ 10V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Rise Time :
- 8.7ns
- Fall Time (Typ) :
- 7.5 ns
- Radiation Hardening :
- No
- Datasheets
- STFI34N65M5
N-Channel Tube 110m Ω @ 14A, 10V ±25V 2700pF @ 100V 62.5nC @ 10V TO-262-3 Full Pack, I2Pak
STFI34N65M5 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2700pF @ 100V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 650V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 650V.As a result of its turn-off delay time, which is 12 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 59 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 25VV.In addition to reducing power consumption, this device uses drive voltage (10V).
STFI34N65M5 Features
a continuous drain current (ID) of 28A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 12 ns
STFI34N65M5 Applications
There are a lot of STMicroelectronics
STFI34N65M5 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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