STFI31N65M5
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- Mfr.Part #
- STFI31N65M5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-262-3 Full Pack, I2Pak
- Datasheet
- Download
- Description
- MOSFET N CH 650V 22A I2PAKFP
- Stock
- 16
- In Stock ：
- 16
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Base Part Number :
- STFI31N
- Turn-Off Delay Time :
- 11 ns
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Operating Temperature :
- 150°C TJ
- Drain to Source Breakdown Voltage :
- 650V
- Turn On Delay Time :
- 46 ns
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Width :
- 4.6mm
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 148m Ω @ 11A, 10V
- Continuous Drain Current (ID) :
- 22A
- Mount :
- Through Hole
- Package / Case :
- TO-262-3 Full Pack, I2Pak
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Series :
- MDmesh™ V
- Power Dissipation :
- 30W
- Vgs (Max) :
- ±25V
- Fall Time (Typ) :
- 8.5 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 1865pF @ 100V
- Length :
- 10.4mm
- Height :
- 10.85mm
- Power Dissipation-Max :
- 30W Tc
- Rise Time :
- 8ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate to Source Voltage (Vgs) :
- 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 10V
- Radiation Hardening :
- No
- Datasheets
- STFI31N65M5
N-Channel Tube 148m Ω @ 11A, 10V ±25V 1865pF @ 100V 45nC @ 10V TO-262-3 Full Pack, I2Pak
STFI31N65M5 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1865pF @ 100V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 22A.With a drain-source breakdown voltage of 650V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 650V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 11 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 46 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.
STFI31N65M5 Features
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 11 ns
STFI31N65M5 Applications
There are a lot of STMicroelectronics
STFI31N65M5 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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