STFI28N60M2
- Mfr.Part #
- STFI28N60M2
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-262-3 Full Pack, I2Pak
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 22A I2PAKFP
- Stock
- 8,017
- In Stock :
- 8,017
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 150m Ω @ 11A, 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Base Part Number :
- STFI28N
- Mount :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 10V
- Operating Temperature :
- 150°C TJ
- Rise Time :
- 7.2ns
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Series :
- MDmesh™ II Plus
- Number of Channels :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 30W Tc
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Package / Case :
- TO-262-3 Full Pack, I2Pak
- Turn On Delay Time :
- 14.5 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Element Configuration :
- Single
- Vgs (Max) :
- ±25V
- Turn-Off Delay Time :
- 100 ns
- Weight :
- 2.084002g
- Continuous Drain Current (ID) :
- 22A
- Resistance :
- 135mOhm
- Gate to Source Voltage (Vgs) :
- 25V
- Fall Time (Typ) :
- 8 ns
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 1440pF @ 100V
- FET Type :
- N-Channel
- Packaging :
- Tube
- Drain to Source Breakdown Voltage :
- 600V
- Datasheets
- STFI28N60M2

N-Channel Tube 150m Ω @ 11A, 10V ±25V 1440pF @ 100V 36nC @ 10V TO-262-3 Full Pack, I2Pak
STFI28N60M2 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1440pF @ 100V.This device has a continuous drain current (ID) of [22A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=600V, the drain-source breakdown voltage is 600V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 100 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 14.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 25V volts.Its overall power consumption can be reduced by using drive voltage (10V).
STFI28N60M2 Features
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 100 ns
STFI28N60M2 Applications
There are a lot of STMicroelectronics
STFI28N60M2 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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