STFI20NM65N
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- Mfr.Part #
- STFI20NM65N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-262-3 Full Pack, I2Pak
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 15A I2PAKFP
- Stock
- 4,425
- In Stock ：
- 4,425
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Turn-Off Delay Time :
- 75 ns
- Resistance :
- 250mOhm
- ECCN Code :
- EAR99
- Base Part Number :
- STFI20N
- Power Dissipation-Max :
- 30W Tc
- Drain to Source Voltage (Vdss) :
- 650V
- Package / Case :
- TO-262-3 Full Pack, I2Pak
- Fall Time (Typ) :
- 21 ns
- Rise Time :
- 13.5ns
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 44nC @ 10V
- Turn On Delay Time :
- 15 ns
- Vgs (Max) :
- ±25V
- Continuous Drain Current (ID) :
- 15A
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Weight :
- 2.240009g
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Input Capacitance (Ciss) (Max) @ Vds :
- 1280pF @ 50V
- Current - Continuous Drain (Id) @ 25°C :
- 15A Tc
- Gate to Source Voltage (Vgs) :
- 25V
- Number of Channels :
- 1
- Series :
- MDmesh™ II
- Mount :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 270m Ω @ 7.5A, 10V
- Drain to Source Breakdown Voltage :
- 710V
- Datasheets
- STFI20NM65N
N-Channel Tube 270m Ω @ 7.5A, 10V ±25V 1280pF @ 50V 44nC @ 10V 650V TO-262-3 Full Pack, I2Pak
STFI20NM65N Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1280pF @ 50V.This device has a continuous drain current (ID) of [15A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=710V, the drain-source breakdown voltage is 710V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 75 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 15 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 25V volts.In order to operate this transistor, a voltage of 650V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
STFI20NM65N Features
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 710V voltage
the turn-off delay time is 75 ns
a 650V drain to source voltage (Vdss)
STFI20NM65N Applications
There are a lot of STMicroelectronics
STFI20NM65N applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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