STFI15NM65N
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- Mfr.Part #
- STFI15NM65N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-262-3 Full Pack, I2Pak
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 12A I2PAKFP
- Stock
- 347
- In Stock ：
- 347
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Vgs (Max) :
- ±25V
- Mount :
- Through Hole
- Fall Time (Typ) :
- 11.4 ns
- Base Part Number :
- STFI15N
- Continuous Drain Current (ID) :
- 12A
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Drain to Source Breakdown Voltage :
- 650V
- Gate Charge (Qg) (Max) @ Vgs :
- 33.3nC @ 10V
- Number of Channels :
- 1
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 30W Tc
- Rds On (Max) @ Id, Vgs :
- 380m Ω @ 6A, 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Gate to Source Voltage (Vgs) :
- 25V
- Package / Case :
- TO-262-3 Full Pack, I2Pak
- Input Capacitance (Ciss) (Max) @ Vds :
- 983pF @ 50V
- Number of Pins :
- 3
- Series :
- MDmesh™ II
- Radiation Hardening :
- No
- Turn-Off Delay Time :
- 14 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 8.5ns
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 55.5 ns
- Datasheets
- STFI15NM65N
N-Channel Tube 380m Ω @ 6A, 10V ±25V 983pF @ 50V 33.3nC @ 10V TO-262-3 Full Pack, I2Pak
STFI15NM65N Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 983pF @ 50V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 650V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 650V.As a result of its turn-off delay time, which is 14 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 55.5 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 25VV.In addition to reducing power consumption, this device uses drive voltage (10V).
STFI15NM65N Features
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 14 ns
STFI15NM65N Applications
There are a lot of STMicroelectronics
STFI15NM65N applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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