STFI15N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±25V

Length :

10.4mm

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

11A

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Packaging :

Tube

Fall Time (Typ) :

11 ns

Gate to Source Voltage (Vgs) :

25V

Width :

4.6mm

JEDEC-95 Code :

TO-281

Rds On (Max) @ Id, Vgs :

340m Ω @ 5.5A, 10V

Mount :

Through Hole

Package / Case :

TO-262-3 Full Pack, I2Pak

Operating Temperature :

150°C TJ

Avalanche Energy Rating (Eas) :

160 mJ

Number of Terminations :

3

Turn On Delay Time :

30 ns

Power Dissipation-Max :

30W Tc

Base Part Number :

STFI15N

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Radiation Hardening :

No

Series :

MDmesh™ V

Number of Elements :

1

Element Configuration :

Single

Transistor Application :

SWITCHING

Turn-Off Delay Time :

12.5 ns

Moisture Sensitivity Level (MSL) :

Not Applicable

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Height :

10.85mm

Rise Time :

8ns

Drain to Source Breakdown Voltage :

650V

Case Connection :

Isolated

Pulsed Drain Current-Max (IDM) :

44A

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

816pF @ 100V

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant