STFI15N60M2-EP

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

MDmesh™ M2

Number of Elements :

1

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

125 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

11A

Case Connection :

Isolated

Package / Case :

TO-262-3 Full Pack, I2Pak

Drain to Source Voltage (Vdss) :

600V

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Pulsed Drain Current-Max (IDM) :

44A

Power Dissipation-Max :

25W Tc

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

Not Applicable

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.378Ohm

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

600V

Vgs(th) (Max) @ Id :

4V @ 250µA

Base Part Number :

STFI15N

Vgs (Max) :

±25V

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

590pF @ 100V

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

JEDEC-95 Code :

TO-281

JESD-30 Code :

R-PSIP-T3

Rds On (Max) @ Id, Vgs :

378m Ω @ 5.5A, 10V

Transistor Application :

SWITCHING