STF15NM65N
- Mfr.Part #
- STF15NM65N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 12A TO220FP
- Stock
- 819
- In Stock :
- 819
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Resistance :
- 380mOhm
- Length :
- 10.4mm
- Lead Free :
- Lead Free
- Package / Case :
- TO-220-3 Full Pack
- Rise Time :
- 8ns
- Turn On Delay Time :
- 55.5 ns
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Power Dissipation :
- 35W
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 16 Weeks
- Max Operating Temperature :
- 150°C
- Turn-Off Delay Time :
- 14 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 983pF @ 50V
- Width :
- 4.6mm
- Threshold Voltage :
- 3V
- Mount :
- Through Hole
- Input Capacitance :
- 983pF
- Height :
- 16.4mm
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 12A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On Max :
- 380 mΩ
- Supplier Device Package :
- TO-220FP
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 380mOhm @ 6A, 10V
- Base Part Number :
- STF15
- Min Operating Temperature :
- -55°C
- Element Configuration :
- Single
- Series :
- MDmesh™ II
- Drain to Source Voltage (Vdss) :
- 650V
- Vgs (Max) :
- ±25V
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Mounting Type :
- Through Hole
- Fall Time (Typ) :
- 26 ns
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 33.3nC @ 10V
- Drain to Source Breakdown Voltage :
- 650V
- FET Type :
- N-Channel
- Drain to Source Resistance :
- 270mOhm
- Power Dissipation-Max :
- 30W Tc
- Datasheets
- STF15NM65N

N-Channel Tube 380mOhm @ 6A, 10V ±25V 983pF @ 50V 33.3nC @ 10V 650V TO-220-3 Full Pack
STF15NM65N Description
The STF15NM65N is an MDmeshTM II N-channel Power MOSFET with reduced gate charge and input capacitance. The second generation of MDmeshTM technology was used to create this Power MOSFET. This ground-breaking Power MOSFET joins the company's strip architecture with a vertical structure to provide one of the lowest ON-resistances in the world. Thus, it is appropriate for high-efficiency converters that have the highest requirements.
STF15NM65N Features
-
100% avalanche tested
-
Low input capacitance and gate charge
-
Low gate input resistance
STF15NM65N Applications
-
Industrial
-
Power Management
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