STD9NM60N
- Mfr.Part #
- STD9NM60N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 6.5A DPAK
- Stock
- 2,037
- In Stock :
- 2,037
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 6.6mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Power Dissipation-Max :
- 70W Tc
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Vgs (Max) :
- ±25V
- Terminal Position :
- Single
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- JESD-30 Code :
- R-PSSO-G2
- Continuous Drain Current (ID) :
- 6.5A
- ECCN Code :
- EAR99
- Height :
- 2.4mm
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Current - Continuous Drain (Id) @ 25°C :
- 6.5A Tc
- Width :
- 6.2mm
- Radiation Hardening :
- No
- Rise Time :
- 23ns
- Threshold Voltage :
- 3V
- Resistance :
- 745mOhm
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- REACH SVHC :
- No SVHC
- Fall Time (Typ) :
- 26.7 ns
- Gate to Source Voltage (Vgs) :
- 25V
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Turn-Off Delay Time :
- 52.5 ns
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 745m Ω @ 3.25A, 10V
- Pulsed Drain Current-Max (IDM) :
- 26A
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Gate Charge (Qg) (Max) @ Vgs :
- 17.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 452pF @ 50V
- Series :
- MDmesh™ II
- Drain Current-Max (Abs) (ID) :
- 9A
- Base Part Number :
- STD9N
- Turn On Delay Time :
- 28 ns
- Drain to Source Breakdown Voltage :
- 600V
- Factory Lead Time :
- 16 Weeks
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Operating Temperature :
- 150°C TJ
- Mount :
- Surface Mount
- Number of Terminations :
- 2
- Power Dissipation :
- 70W
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Datasheets
- STD9NM60N
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N-Channel Tape & Reel (TR) 745m Ω @ 3.25A, 10V ±25V 452pF @ 50V 17.4nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD9NM60N Description
The second generation of MDmeshTM technology is used to create this range of devices. This ground-breaking Power MOSFET combines a new vertical structure with the company's strip layout to provide one of the lowest on-resistance and gate charge in the world. As a result, it is well suited to the most demanding high efficiency converters.
STD9NM60N Features
-
100% avalanche tested
-
Low input capacitance and gate charge
-
Low gate input resistance
STD9NM60N Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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