STD90N4F3
- Mfr.Part #
- STD90N4F3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 80A DPAK
- Stock
- 17,315
- In Stock :
- 17,315
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 110W
- Vgs (Max) :
- ±20V
- Number of Terminations :
- 2
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pin Count :
- 3
- Case Connection :
- DRAIN
- Number of Pins :
- 3
- Rise Time :
- 60ns
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Gate to Source Voltage (Vgs) :
- 20V
- Turn On Delay Time :
- 15 ns
- Mounting Type :
- Surface Mount
- Dual Supply Voltage :
- 40V
- Operating Temperature :
- -55°C~175°C TJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- REACH SVHC :
- No SVHC
- Resistance :
- 5.8mOhm
- Rds On (Max) @ Id, Vgs :
- 6.5m Ω @ 40A, 10V
- Base Part Number :
- STD90
- Turn-Off Delay Time :
- 40 ns
- Drain Current-Max (Abs) (ID) :
- 80A
- Gate Charge (Qg) (Max) @ Vgs :
- 54nC @ 10V
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Avalanche Energy Rating (Eas) :
- 400 mJ
- Power Dissipation-Max :
- 110W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 2200pF @ 25V
- Height :
- 2.4mm
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drain to Source Breakdown Voltage :
- 40V
- Lead Free :
- Lead Free
- Termination :
- SMD/SMT
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- STripFET™ III
- Length :
- 6.6mm
- Fall Time (Typ) :
- 15 ns
- JESD-30 Code :
- R-PSSO-G2
- Terminal Form :
- Gull wing
- Width :
- 6.2mm
- Mount :
- Surface Mount
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 40A
- Operating Mode :
- ENHANCEMENT MODE
- Nominal Vgs :
- 4 V
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- STD90N4F3
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N-Channel Tape & Reel (TR) 6.5m Ω @ 40A, 10V ±20V 2200pF @ 25V 54nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD90N4F3 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 400 mJ.The maximum input capacitance of this device is 2200pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 40A.When VGS=40V, and ID flows to VDS at 40VVDS, the drain-source breakdown voltage is 40V in this device.As shown in the table below, the drain current of this device is 80A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 40 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 15 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
STD90N4F3 Features
the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 40 ns
STD90N4F3 Applications
There are a lot of STMicroelectronics
STD90N4F3 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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