STD95NH02LT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

600 mJ

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

5m Ω @ 40A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

ECCN Code :

EAR99

Reach Compliance Code :

not_compliant

Rise Time :

110ns

Additional Feature :

LOW THRESHOLD

Continuous Drain Current (ID) :

80A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

20 ns

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 5V

Pulsed Drain Current-Max (IDM) :

320A

Transistor Application :

SWITCHING

FET Type :

N-Channel

Resistance :

5mOhm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Turn-Off Delay Time :

47 ns

JESD-30 Code :

R-PSSO-G2

Lead Free :

Lead Free

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

2070pF @ 15V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Case Connection :

DRAIN

Number of Terminations :

2

Terminal Form :

Gull wing

Current Rating :

80A

Time@Peak Reflow Temperature-Max (s) :

30

Series :

STripFET™

Vgs(th) (Max) @ Id :

1V @ 250μA

Voltage - Rated DC :

30V

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn)

Power Dissipation :

100W

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

Base Part Number :

STD95

Power Dissipation-Max :

100W Tc

Drain to Source Breakdown Voltage :

24V