STD90NH02LT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Avalanche Energy Rating (Eas) :

600 mJ

Power Dissipation :

95W

Terminal Finish :

Matte Tin (Sn)

Mounting Type :

Surface Mount

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

2850pF @ 15V

JESD-30 Code :

R-PSSO-G2

Rise Time :

75ns

Current Rating :

60A

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

24V

Rds On (Max) @ Id, Vgs :

6m Ω @ 30A, 10V

Base Part Number :

STD90

Turn-Off Delay Time :

50 ns

Lead Free :

Lead Free

Number of Pins :

3

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Fall Time (Typ) :

18 ns

JEDEC-95 Code :

TO-252AA

Turn On Delay Time :

13 ns

Continuous Drain Current (ID) :

60A

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Application :

SWITCHING

Power Dissipation-Max :

95W Tc

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Drain-source On Resistance-Max :

0.006Ohm

Gate Charge (Qg) (Max) @ Vgs :

64nC @ 10V

JESD-609 Code :

e3

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Radiation Hardening :

No

Voltage - Rated DC :

24V

Pin Count :

3

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

2.5V @ 250μA

ECCN Code :

EAR99

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

240A

Series :

STripFET™ II

Additional Feature :

LOW THRESHOLD