STD95N4LF3
- Mfr.Part #
- STD95N4LF3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 80A DPAK
- Stock
- 2,869
- In Stock :
- 2,869
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 7.5 ns
- Pin Count :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- Radiation Hardening :
- No
- Turn-Off Delay Time :
- 45 ns
- Rds On (Max) @ Id, Vgs :
- 6m Ω @ 40A, 10V
- Avalanche Energy Rating (Eas) :
- 400 mJ
- Resistance :
- 6mOhm
- Number of Elements :
- 1
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Case Connection :
- DRAIN
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Element Configuration :
- Single
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 80A
- Vgs (Max) :
- ±16V
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 110W Tc
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 11 ns
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~175°C TJ
- Packaging :
- Tape and Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds :
- 2500pF @ 25V
- Series :
- STripFET™ III
- Number of Terminations :
- 2
- Mounting Type :
- Surface Mount
- Rise Time :
- 45ns
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- STD95
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Gate to Source Voltage (Vgs) :
- 16V
- Power Dissipation :
- 110W
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Drain to Source Breakdown Voltage :
- 40V
- JESD-30 Code :
- R-PSSO-G2
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Datasheets
- STD95N4LF3
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N-Channel Tape & Reel (TR) 6m Ω @ 40A, 10V ±16V 2500pF @ 25V 70nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD95N4LF3 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 400 mJ.A device's maximal input capacitance is 2500pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 80A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 40V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 45 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 16V volts.This device reduces its overall power consumption by using drive voltage (5V 10V).
STD95N4LF3 Features
the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 45 ns
STD95N4LF3 Applications
There are a lot of STMicroelectronics
STD95N4LF3 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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