STD90N03L-1
- Mfr.Part #
- STD90N03L-1
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 80A IPAK
- Stock
- 6,160
- In Stock :
- 6,160
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Continuous Drain Current (ID) :
- 80A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- STD90
- Rds On (Max) @ Id, Vgs :
- 5.7m Ω @ 40A, 10V
- Power Dissipation-Max :
- 95W Tc
- Series :
- STripFET™ III
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Number of Pins :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 3
- Number of Elements :
- 1
- Power Dissipation :
- 95W
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 0.0057Ohm
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 2805pF @ 25V
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 24 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Fall Time (Typ) :
- 33 ns
- Number of Terminations :
- 3
- Vgs (Max) :
- ±20V
- Additional Feature :
- LOW THRESHOLD
- Reach Compliance Code :
- Unknown
- Drain to Source Breakdown Voltage :
- 30V
- Case Connection :
- DRAIN
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Temperature :
- -55°C~175°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 5V
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Packaging :
- Tube
- Rise Time :
- 135ns
- Mount :
- Through Hole
- Qualification Status :
- Not Qualified
- Datasheets
- STD90N03L-1

N-Channel Tube 5.7m Ω @ 40A, 10V ±20V 2805pF @ 25V 32nC @ 5V TO-251-3 Short Leads, IPak, TO-251AA
STD90N03L-1 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2805pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 80A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.It is [24 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (5V 10V).
STD90N03L-1 Features
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 24 ns
STD90N03L-1 Applications
There are a lot of STMicroelectronics
STD90N03L-1 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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