STD9NM50N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Fall Time (Typ) :

19 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Form :

Gull wing

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Transistor Element Material :

SILICON

Power Dissipation :

70W

Operating Temperature :

150°C TJ

Avalanche Energy Rating (Eas) :

150 mJ

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

500V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Factory Lead Time :

16 Weeks

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

45 ns

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

570pF @ 50V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Number of Terminations :

2

Turn On Delay Time :

7 ns

Power Dissipation-Max :

45W Tc

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Rise Time :

16ns

Gate to Source Voltage (Vgs) :

25V

ECCN Code :

EAR99

Number of Pins :

3

Continuous Drain Current (ID) :

5A

Resistance :

560mOhm

Vgs (Max) :

±25V

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

790m Ω @ 2.5A, 10V

FET Type :

N-Channel

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Base Part Number :

STD9N

Series :

MDmesh™ II