STD9NM50N-1

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Rise Time :

16ns

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Power Dissipation-Max :

70W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn-Off Delay Time :

45 ns

Reach Compliance Code :

Unknown

Mounting Type :

Through Hole

Fall Time (Typ) :

19 ns

Number of Terminations :

3

FET Type :

N-Channel

Operating Temperature :

150°C TJ

Series :

MDmesh™

Qualification Status :

Not Qualified

Avalanche Energy Rating (Eas) :

150 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

560m Ω @ 3.7A, 10V

Gate to Source Voltage (Vgs) :

25V

Drain-source On Resistance-Max :

0.56Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSIP-T3

Element Configuration :

Single

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Number of Elements :

1

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

30A

Drain to Source Breakdown Voltage :

500V

Vgs (Max) :

±25V

Power Dissipation :

70W

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Continuous Drain Current (ID) :

5A

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

570pF @ 50V

Transistor Application :

SWITCHING