STD9NM40N
- Mfr.Part #
- STD9NM40N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 5.6A DPAK
- Stock
- 1,127
- In Stock :
- 1,127
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Number of Pins :
- 3
- Lifecycle Status :
- NRND (Last Updated: 8 months ago)
- Rise Time :
- 4.4ns
- Continuous Drain Current (ID) :
- 5.6A
- Mount :
- Surface Mount
- Base Part Number :
- STD9N
- Series :
- MDmesh™ II
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 10V
- Packaging :
- Tape and Reel (TR)
- Power Dissipation-Max :
- 60W Tc
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Reach Compliance Code :
- not_compliant
- Current - Continuous Drain (Id) @ 25°C :
- 5.6A Tc
- Gate to Source Voltage (Vgs) :
- 25V
- Peak Reflow Temperature (Cel) :
- 260
- Input Capacitance (Ciss) (Max) @ Vds :
- 365pF @ 50V
- Rds On (Max) @ Id, Vgs :
- 790m Ω @ 2.5A, 10V
- Fall Time (Typ) :
- 8.8 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Drain to Source Breakdown Voltage :
- 400V
- ECCN Code :
- EAR99
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- JESD-609 Code :
- e3
- Turn-Off Delay Time :
- 25 ns
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- ±25V
- Power Dissipation :
- 60W
- Number of Elements :
- 1
- Datasheets
- STD9NM40N
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N-Channel Tape & Reel (TR) 790m Ω @ 2.5A, 10V ±25V 365pF @ 50V 14nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD9NM40N Overview
The maximum input capacitance of this device is 365pF @ 50V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 5.6A.When VGS=400V, and ID flows to VDS at 400VVDS, the drain-source breakdown voltage is 400V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 25 ns.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
STD9NM40N Features
a continuous drain current (ID) of 5.6A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 25 ns
STD9NM40N Applications
There are a lot of STMicroelectronics
STD9NM40N applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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