STD9N65M2

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Mfr.Part #
STD9N65M2
Manufacturer
STMicroelectronics
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 650V 5A DPAK
Stock
1,738
In Stock :
1,738

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Pins :
3
Continuous Drain Current (ID) :
5A
Mount :
Surface Mount
Threshold Voltage :
3V
Vgs(th) (Max) @ Id :
4V @ 250µA
Operating Temperature :
150°C TJ
Vgs (Max) :
±25V
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Input Capacitance (Ciss) (Max) @ Vds :
315pF @ 100V
Gate Charge (Qg) (Max) @ Vgs :
10nC @ 10V
Gate to Source Voltage (Vgs) :
25V
RoHS Status :
ROHS3 Compliant
Turn-Off Delay Time :
22.5 ns
Packaging :
Cut Tape (CT)
Mounting Type :
Surface Mount
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Fall Time (Typ) :
18 ns
Current - Continuous Drain (Id) @ 25°C :
5A Tc
Factory Lead Time :
16 Weeks
Base Part Number :
STD9N
Weight :
3.949996g
ECCN Code :
EAR99
Number of Channels :
1
Rds On (Max) @ Id, Vgs :
900m Ω @ 2.5A, 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Series :
MDmesh™
REACH SVHC :
No SVHC
Rise Time :
6.6ns
Drain to Source Breakdown Voltage :
650V
Power Dissipation-Max :
60W Tc
Turn On Delay Time :
7.5 ns
FET Type :
N-Channel
Datasheets
STD9N65M2
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STD9N65M2 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:150°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, Base Part Number:STD9N, Number of Channels:1, STD9N65M2 pinout, STD9N65M2 datasheet PDF, STD9N65M2 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STD9N65M2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STD9N65M2


N-Channel Cut Tape (CT) 900m Ω @ 2.5A, 10V ±25V 315pF @ 100V 10nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

STD9N65M2 Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 315pF @ 100V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 5A.With a drain-source breakdown voltage of 650V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 650V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 22.5 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7.5 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.3V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (10V) reduces this device's overall power consumption.

STD9N65M2 Features


a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 22.5 ns
a threshold voltage of 3V


STD9N65M2 Applications


There are a lot of STMicroelectronics
STD9N65M2 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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