STD9N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Turn On Delay Time :

8.8 ns

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn-Off Delay Time :

22 ns

Continuous Drain Current (ID) :

5.5A

Width :

6.2mm

Drain to Source Breakdown Voltage :

650V

Fall Time (Typ) :

13.5 ns

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Lead Free :

Lead Free

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rise Time :

7.5ns

Rds On (Max) @ Id, Vgs :

780m Ω @ 3A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

780mOhm

ECCN Code :

EAR99

Power Dissipation-Max :

60W Tc

Input Capacitance (Ciss) (Max) @ Vds :

320pF @ 100V

Vgs (Max) :

±25V

RoHS Status :

ROHS3 Compliant

Number of Pins :

2

Drain to Source Voltage (Vdss) :

600V

Series :

MDmesh™ II Plus

Element Configuration :

Single

Packaging :

Cut Tape (CT)

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Power Dissipation :

60W

Factory Lead Time :

16 Weeks

Length :

6.6mm

Height :

2.4mm

FET Type :

N-Channel

Base Part Number :

STD9N

Operating Temperature :

150°C TJ