STD2NM60T4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

8.4nC @ 10V

Avalanche Energy Rating (Eas) :

250 mJ

Lead Free :

Lead Free

Continuous Drain Current (ID) :

2A

Number of Elements :

1

Reach Compliance Code :

not_compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

ECCN Code :

EAR99

Power Dissipation-Max :

46W Tc

Pulsed Drain Current-Max (IDM) :

8A

Series :

MDmesh™

Input Capacitance (Ciss) (Max) @ Vds :

160pF @ 25V

Power Dissipation :

46W

Gate to Source Voltage (Vgs) :

30V

Element Configuration :

Single

Operating Temperature :

150°C TJ

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

5V @ 250μA

Base Part Number :

STD2N

Fall Time (Typ) :

25 ns

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

600V

JESD-609 Code :

e3

Rise Time :

8ns

Time@Peak Reflow Temperature-Max (s) :

30

Qualification Status :

Not Qualified

Terminal Finish :

Matte Tin (Sn)

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

2A

Current Rating :

2A

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

FET Type :

N-Channel

Voltage - Rated DC :

600V

Number of Terminations :

2

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

3.2 Ω @ 1A, 10V