STD20NF06T4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Power Dissipation-Max :

60W Tc

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

40m Ω @ 12A, 10V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

60V

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Number of Pins :

3

Series :

STripFET™ II

Current - Continuous Drain (Id) @ 25°C :

24A Tc

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e3

JEDEC-95 Code :

TO-252AA

Case Connection :

DRAIN

Contact Plating :

Tin

Current Rating :

24A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Pin Count :

3

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Base Part Number :

STD20N

Input Capacitance (Ciss) (Max) @ Vds :

690pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Resistance :

40mOhm

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Turn-Off Delay Time :

30 ns

REACH SVHC :

No SVHC

Turn On Delay Time :

10 ns

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Fall Time (Typ) :

8 ns

Width :

6.2mm

Number of Terminations :

2

Number of Elements :

1

ECCN Code :

EAR99

Rise Time :

30ns

Length :

6.6mm

Height :

2.4mm

Threshold Voltage :

4V

Time@Peak Reflow Temperature-Max (s) :

30

Voltage - Rated DC :

60V

Radiation Hardening :

No

Element Configuration :

Single

Power Dissipation :

60W

Pulsed Drain Current-Max (IDM) :

96A

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

24A