STD20N20T4
- Mfr.Part #
- STD20N20T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 18A DPAK
- Stock
- 5,987
- In Stock :
- 5,987
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Max Operating Temperature :
- 150°C
- Mount :
- Surface Mount
- Continuous Drain Current (ID) :
- 18A
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Voltage - Rated DC :
- 200V
- Dual Supply Voltage :
- 200V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs :
- 39nC @ 10V
- Mounting Type :
- Surface Mount
- Drain-source On Resistance-Max :
- 0.125Ohm
- Fall Time (Typ) :
- 10 ns
- Power Dissipation-Max :
- 90W Tc
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Avalanche Energy Rating (Eas) :
- 110 mJ
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 15 ns
- Current - Continuous Drain (Id) @ 25°C :
- 18A Tc
- Terminal Finish :
- Tin (Sn)
- JEDEC-95 Code :
- TO-252AA
- Rise Time :
- 30ns
- FET Type :
- N-Channel
- Voltage :
- 200V
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- Current Rating :
- 18A
- Base Part Number :
- STD20N
- Nominal Vgs :
- 3 V
- Rds On (Max) @ Id, Vgs :
- 125m Ω @ 10A, 10V
- JESD-30 Code :
- R-PSSO-G2
- Lead Free :
- Contains Lead
- Peak Reflow Temperature (Cel) :
- 260
- Drain to Source Breakdown Voltage :
- 200V
- Current :
- 18A
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Number of Pins :
- 3
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Series :
- STripFET™ II
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Turn-Off Delay Time :
- 40 ns
- Number of Terminations :
- 2
- Power Dissipation :
- 90W
- Pin Count :
- 3
- Min Operating Temperature :
- -50°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 940pF @ 25V
- Datasheets
- STD20N20T4
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N-Channel Tape & Reel (TR) 125m Ω @ 10A, 10V ±20V 940pF @ 25V 39nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD20N20T4 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 110 mJ.A device's maximal input capacitance is 940pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 18A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 40 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 15 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (10V).
STD20N20T4 Features
the avalanche energy rating (Eas) is 110 mJ
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 40 ns
STD20N20T4 Applications
There are a lot of STMicroelectronics
STD20N20T4 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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