STD20N20T4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Drain-source On Resistance-Max :

0.125Ohm

Current Rating :

18A

Number of Terminations :

2

Vgs(th) (Max) @ Id :

4V @ 250µA

Voltage :

200V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

40 ns

Pin Count :

3

Turn On Delay Time :

15 ns

Terminal Form :

Gull wing

ECCN Code :

EAR99

Min Operating Temperature :

-50°C

Fall Time (Typ) :

10 ns

Mounting Type :

Surface Mount

Lead Free :

Contains Lead

Rds On (Max) @ Id, Vgs :

125m Ω @ 10A, 10V

Terminal Finish :

Tin (Sn)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Current :

18A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

JEDEC-95 Code :

TO-252AA

Power Dissipation :

90W

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Max Operating Temperature :

150°C

Number of Pins :

3

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

FET Type :

N-Channel

Vgs (Max) :

±20V

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

30

Continuous Drain Current (ID) :

18A

Mount :

Surface Mount

Power Dissipation-Max :

90W Tc

Base Part Number :

STD20N

Series :

STripFET™ II

Number of Elements :

1

Voltage - Rated DC :

200V

Rise Time :

30ns

Dual Supply Voltage :

200V

Drain to Source Breakdown Voltage :

200V

Avalanche Energy Rating (Eas) :

110 mJ

Input Capacitance (Ciss) (Max) @ Vds :

940pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Nominal Vgs :

3 V