STD20NF10T4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Power Dissipation :

85W

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate to Source Voltage (Vgs) :

20V

Rise Time :

40ns

Transistor Element Material :

SILICON

Turn On Delay Time :

15 ns

Pin Count :

3

Series :

STripFET™ II

ECCN Code :

EAR99

Number of Elements :

1

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

30

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 25V

Fall Time (Typ) :

10 ns

Continuous Drain Current (ID) :

25A

Number of Terminations :

2

Turn-Off Delay Time :

45 ns

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

45m Ω @ 15A, 10V

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

85W Tc

Drain Current-Max (Abs) (ID) :

20A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

100A

Drain to Source Breakdown Voltage :

100V

Drain-source On Resistance-Max :

0.045Ohm

Base Part Number :

STD20N

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Mount :

Surface Mount

Terminal Finish :

Matte Tin (Sn) - annealed