STD20NF10T4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

45m Ω @ 15A, 10V

Rise Time :

40ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Surface Mount

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

Pin Count :

3

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Continuous Drain Current (ID) :

25A

Number of Terminations :

2

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Turn On Delay Time :

15 ns

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

85W Tc

Terminal Form :

Gull wing

Power Dissipation :

85W

Base Part Number :

STD20N

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Turn-Off Delay Time :

45 ns

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

100A

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn) - annealed

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

260

Number of Pins :

3

Fall Time (Typ) :

10 ns

Number of Elements :

1

Mount :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

ECCN Code :

EAR99

Element Configuration :

Single

Drain to Source Breakdown Voltage :

100V

Drain Current-Max (Abs) (ID) :

20A

Series :

STripFET™ II

Gate to Source Voltage (Vgs) :

20V

Drain-source On Resistance-Max :

0.045Ohm