STD20NF06L

Manufacturer :

UTD Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

60V

Height :

2.4mm

Rds On (Max) @ Id, Vgs :

40m Ω @ 12A, 10V

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Number of Terminations :

2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Time@Peak Reflow Temperature-Max (s) :

30

Turn-Off Delay Time :

20 ns

Continuous Drain Current (ID) :

24A

Operating Temperature :

-55°C~175°C TJ

Threshold Voltage :

2.5V

Nominal Vgs :

2.5 V

Power Dissipation-Max :

60W Tc

JESD-609 Code :

e3

Width :

6.2mm

Contact Plating :

Tin

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Mount :

Surface Mount

Resistance :

40mOhm

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 25V

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Vgs (Max) :

±18V

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Length :

6.6mm

Series :

STripFET™ II

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Current Rating :

24A

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Voltage - Rated DC :

60V

Operating Mode :

ENHANCEMENT MODE

Base Part Number :

STD20N

FET Type :

N-Channel

Number of Pins :

3

Turn On Delay Time :

11 ns

Radiation Hardening :

No

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Fall Time (Typ) :

12 ns

Pulsed Drain Current-Max (IDM) :

96A

Power Dissipation :

60W

Rise Time :

50ns

Pin Count :

3

Gate to Source Voltage (Vgs) :

18V