STD20NF06L
- Mfr.Part #
- STD20NF06L
- Manufacturer
- UTD Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TO-252 MOSFETS ROHS
- Stock
- 5,083
- In Stock :
- 5,083
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- Manufacturer :
- UTD Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- STripFET™ II
- Pulsed Drain Current-Max (IDM) :
- 96A
- Threshold Voltage :
- 2.5V
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Base Part Number :
- STD20N
- Number of Terminations :
- 2
- Current Rating :
- 24A
- Number of Pins :
- 3
- Length :
- 6.6mm
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 20 ns
- Fall Time (Typ) :
- 12 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation-Max :
- 60W Tc
- Contact Plating :
- Tin
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 24A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 660pF @ 25V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- FET Type :
- N-Channel
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- Resistance :
- 40mOhm
- Drain to Source Breakdown Voltage :
- 60V
- Vgs (Max) :
- ±18V
- Mount :
- Surface Mount
- Nominal Vgs :
- 2.5 V
- REACH SVHC :
- No SVHC
- Rds On (Max) @ Id, Vgs :
- 40m Ω @ 12A, 10V
- Gate to Source Voltage (Vgs) :
- 18V
- Turn On Delay Time :
- 11 ns
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Power Dissipation :
- 60W
- JESD-30 Code :
- R-PSSO-G2
- Width :
- 6.2mm
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 24A
- Operating Temperature :
- -55°C~175°C TJ
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Height :
- 2.4mm
- Pin Count :
- 3
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 10V
- Rise Time :
- 50ns
- Voltage - Rated DC :
- 60V
- Datasheets
- STD20NF06L
STD20NF06L Documents
N-Channel Tape & Reel (TR) 40m Ω @ 12A, 10V ±18V 660pF @ 25V 13nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD20NF06LT4 Description
The latest improvement of STMicroelectronics' distinctive "Single Feature SizeTM" stripbased process is this Power MOSFET. The resultant transistor exhibits a remarkable manufacturing repeatability, robust avalanche properties, and extraordinarily high packing density for low on-resistance.
STD20NF06LT4 Features
-
Exceptional dv/dt capability
-
100% avalanche tested
-
Application oriented characterization
STD20NF06LT4 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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