STD20NF06L

Manufacturer :

UTD Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

40m Ω @ 12A, 10V

Operating Temperature :

-55°C~175°C TJ

Height :

2.4mm

FET Type :

N-Channel

Lead Free :

Lead Free

Fall Time (Typ) :

12 ns

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 25V

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

REACH SVHC :

No SVHC

Number of Pins :

3

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

2.5V

JESD-609 Code :

e3

Number of Elements :

1

Nominal Vgs :

2.5 V

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Turn On Delay Time :

11 ns

Contact Plating :

Tin

Element Configuration :

Single

Mounting Type :

Surface Mount

Series :

STripFET™ II

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

Current Rating :

24A

Pulsed Drain Current-Max (IDM) :

96A

Drain to Source Breakdown Voltage :

60V

Power Dissipation :

60W

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Rise Time :

50ns

Radiation Hardening :

No

Continuous Drain Current (ID) :

24A

Turn-Off Delay Time :

20 ns

Vgs (Max) :

±18V

Pin Count :

3

Voltage - Rated DC :

60V

Length :

6.6mm

Gate to Source Voltage (Vgs) :

18V

Base Part Number :

STD20N

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

6.2mm

Resistance :

40mOhm

Power Dissipation-Max :

60W Tc

JESD-30 Code :

R-PSSO-G2