STD20N20T4
- Mfr.Part #
- STD20N20T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 18A DPAK
- Stock
- 5,987
- In Stock :
- 5,987
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JEDEC-95 Code :
- TO-252AA
- Mount :
- Surface Mount
- Voltage :
- 200V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Packaging :
- Tape and Reel (TR)
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Nominal Vgs :
- 3 V
- Drain to Source Breakdown Voltage :
- 200V
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Avalanche Energy Rating (Eas) :
- 110 mJ
- Drain-source On Resistance-Max :
- 0.125Ohm
- Gate to Source Voltage (Vgs) :
- 20V
- Max Operating Temperature :
- 150°C
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 90W Tc
- Base Part Number :
- STD20N
- Min Operating Temperature :
- -50°C
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Terminal Form :
- Gull wing
- Turn-Off Delay Time :
- 40 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 39nC @ 10V
- Vgs (Max) :
- ±20V
- Number of Terminations :
- 2
- Turn On Delay Time :
- 15 ns
- Rise Time :
- 30ns
- Power Dissipation :
- 90W
- Lead Free :
- Contains Lead
- Dual Supply Voltage :
- 200V
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 3
- Current Rating :
- 18A
- Fall Time (Typ) :
- 10 ns
- Rds On (Max) @ Id, Vgs :
- 125m Ω @ 10A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 18A Tc
- Terminal Finish :
- Tin (Sn)
- REACH SVHC :
- No SVHC
- Continuous Drain Current (ID) :
- 18A
- JESD-30 Code :
- R-PSSO-G2
- Series :
- STripFET™ II
- Voltage - Rated DC :
- 200V
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Current :
- 18A
- Number of Elements :
- 1
- Pin Count :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 940pF @ 25V
- Datasheets
- STD20N20T4
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N-Channel Tape & Reel (TR) 125m Ω @ 10A, 10V ±20V 940pF @ 25V 39nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD20N20T4 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 110 mJ.A device's maximal input capacitance is 940pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 18A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 40 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 15 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (10V).
STD20N20T4 Features
the avalanche energy rating (Eas) is 110 mJ
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 40 ns
STD20N20T4 Applications
There are a lot of STMicroelectronics
STD20N20T4 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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