STD22NM20NT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

MDmesh™ II

Number of Elements :

1

Dual Supply Voltage :

200V

Resistance :

105mOhm

Threshold Voltage :

4.2V

Vgs(th) (Max) @ Id :

5V @ 250μA

REACH SVHC :

No SVHC

Terminal Finish :

Matte Tin (Sn)

Termination :

SMD/SMT

Mounting Type :

Surface Mount

Element Configuration :

Single

Lead Free :

Lead Free

Current Rating :

22A

JEDEC-95 Code :

TO-252AA

FET Type :

N-Channel

Base Part Number :

STD22N

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Nominal Vgs :

4.2 V

Mount :

Surface Mount

Voltage - Rated DC :

200V

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Turn-Off Delay Time :

40 ns

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

30

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Number of Pins :

3

Reach Compliance Code :

not_compliant

Power Dissipation-Max :

100W Tc

Pulsed Drain Current-Max (IDM) :

88A

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 25V

Transistor Element Material :

SILICON

Power Dissipation :

100W

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

22A

Drain to Source Breakdown Voltage :

200V

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Rds On (Max) @ Id, Vgs :

105m Ω @ 11A, 10V

ECCN Code :

EAR99

JESD-609 Code :

e3

Pin Count :

3

Peak Reflow Temperature (Cel) :

260

Rise Time :

15ns

Fall Time (Typ) :

11 ns

Operating Temperature :

-65°C~150°C TJ

Transistor Application :

SWITCHING