STD22NM20NT4
- Mfr.Part #
- STD22NM20NT4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 22A DPAK
- Stock
- 18,639
- In Stock :
- 18,639
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 3
- Number of Terminations :
- 2
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Rds On (Max) @ Id, Vgs :
- 105m Ω @ 11A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 15ns
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 200V
- Power Dissipation :
- 100W
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Nominal Vgs :
- 4.2 V
- Current Rating :
- 22A
- JESD-30 Code :
- R-PSSO-G2
- Terminal Form :
- Gull wing
- Base Part Number :
- STD22N
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Continuous Drain Current (ID) :
- 22A
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Resistance :
- 105mOhm
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- 200V
- Turn-Off Delay Time :
- 40 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 100W Tc
- Number of Elements :
- 1
- Dual Supply Voltage :
- 200V
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Qualification Status :
- Not Qualified
- Input Capacitance (Ciss) (Max) @ Vds :
- 800pF @ 25V
- Fall Time (Typ) :
- 11 ns
- Pulsed Drain Current-Max (IDM) :
- 88A
- Series :
- MDmesh™ II
- Vgs (Max) :
- ±20V
- RoHS Status :
- ROHS3 Compliant
- Termination :
- SMD/SMT
- Gate to Source Voltage (Vgs) :
- 20V
- Pin Count :
- 3
- Reach Compliance Code :
- not_compliant
- Threshold Voltage :
- 4.2V
- JEDEC-95 Code :
- TO-252AA
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 10V
- Terminal Finish :
- Matte Tin (Sn)
- Operating Temperature :
- -65°C~150°C TJ
- Mount :
- Surface Mount
- Datasheets
- STD22NM20NT4
STD22NM20NT4 Documents
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N-Channel Tape & Reel (TR) 105m Ω @ 11A, 10V ±20V 800pF @ 25V 50nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD22NM20NT4 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 800pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 22A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=200V. And this device has 200V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 40 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 88A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 4.2V threshold voltage. By using drive voltage (10V), this device helps reduce its overall power consumption.
STD22NM20NT4 Features
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 88A.
a threshold voltage of 4.2V
STD22NM20NT4 Applications
There are a lot of STMicroelectronics
STD22NM20NT4 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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