STD22NM20NT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation :

100W

Gate to Source Voltage (Vgs) :

20V

Peak Reflow Temperature (Cel) :

260

Termination :

SMD/SMT

Drain to Source Breakdown Voltage :

200V

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

30

Rise Time :

15ns

Rds On (Max) @ Id, Vgs :

105m Ω @ 11A, 10V

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Pulsed Drain Current-Max (IDM) :

88A

Current Rating :

22A

JEDEC-95 Code :

TO-252AA

Resistance :

105mOhm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Voltage - Rated DC :

200V

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Vgs (Max) :

±20V

Lead Free :

Lead Free

Mount :

Surface Mount

Base Part Number :

STD22N

Terminal Finish :

Matte Tin (Sn)

Continuous Drain Current (ID) :

22A

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Number of Elements :

1

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Power Dissipation-Max :

100W Tc

Packaging :

Tape and Reel (TR)

Pin Count :

3

Threshold Voltage :

4.2V

Reach Compliance Code :

not_compliant

FET Type :

N-Channel

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

5V @ 250μA

Fall Time (Typ) :

11 ns

Series :

MDmesh™ II

Operating Temperature :

-65°C~150°C TJ

Turn-Off Delay Time :

40 ns

JESD-30 Code :

R-PSSO-G2

Nominal Vgs :

4.2 V

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 25V

Dual Supply Voltage :

200V