STD22NM20NT4
- Mfr.Part #
- STD22NM20NT4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 22A DPAK
- Stock
- 18,639
- In Stock :
- 18,639
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 22A
- JEDEC-95 Code :
- TO-252AA
- Power Dissipation-Max :
- 100W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 800pF @ 25V
- Operating Temperature :
- -65°C~150°C TJ
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Voltage - Rated DC :
- 200V
- Current Rating :
- 22A
- Rise Time :
- 15ns
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Base Part Number :
- STD22N
- Turn-Off Delay Time :
- 40 ns
- FET Type :
- N-Channel
- Dual Supply Voltage :
- 200V
- JESD-30 Code :
- R-PSSO-G2
- Qualification Status :
- Not Qualified
- Nominal Vgs :
- 4.2 V
- Termination :
- SMD/SMT
- Rds On (Max) @ Id, Vgs :
- 105m Ω @ 11A, 10V
- Number of Terminations :
- 2
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 100W
- RoHS Status :
- ROHS3 Compliant
- Threshold Voltage :
- 4.2V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 10V
- Drain to Source Breakdown Voltage :
- 200V
- Pin Count :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Form :
- Gull wing
- Series :
- MDmesh™ II
- Number of Elements :
- 1
- Element Configuration :
- Single
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Vgs (Max) :
- ±20V
- Pulsed Drain Current-Max (IDM) :
- 88A
- Fall Time (Typ) :
- 11 ns
- Reach Compliance Code :
- not_compliant
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Resistance :
- 105mOhm
- Number of Pins :
- 3
- Datasheets
- STD22NM20NT4
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N-Channel Tape & Reel (TR) 105m Ω @ 11A, 10V ±20V 800pF @ 25V 50nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD22NM20NT4 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 800pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 22A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=200V. And this device has 200V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 40 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 88A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 4.2V threshold voltage. By using drive voltage (10V), this device helps reduce its overall power consumption.
STD22NM20NT4 Features
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 88A.
a threshold voltage of 4.2V
STD22NM20NT4 Applications
There are a lot of STMicroelectronics
STD22NM20NT4 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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