STD2NK90ZT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

11ns

Input Capacitance (Ciss) (Max) @ Vds :

485pF @ 25V

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Drive Voltage (Max Rds On,Min Rds On) :

10V

Resistance :

6.5Ohm

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs (Max) :

±30V

Pin Count :

3

Additional Feature :

AVALANCHE RATED

Power Dissipation :

70W

Base Part Number :

STD2N

Number of Elements :

1

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

900V

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Contact Plating :

Tin

FET Type :

N-Channel

Factory Lead Time :

12 Weeks

Number of Pins :

3

Lead Free :

Lead Free

Current Rating :

2.1A

Voltage - Rated DC :

900V

Threshold Voltage :

3.75V

Terminal Form :

Gull wing

Element Configuration :

Single

Series :

SuperMESH™

Fall Time (Typ) :

40 ns

Length :

6.6mm

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-252AA

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

2.1A Tc

Pulsed Drain Current-Max (IDM) :

8.4A

Mount :

Surface Mount

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

70W Tc

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Turn On Delay Time :

21 ns

Width :

6.2mm

Mounting Type :

Surface Mount

Turn-Off Delay Time :

43 ns

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Transistor Application :

SWITCHING

Radiation Hardening :

No

Height :

2.4mm

Gate to Source Voltage (Vgs) :

30V

Rds On (Max) @ Id, Vgs :

6.5 Ω @ 1.05A, 10V

Continuous Drain Current (ID) :

2.1A