STD2NK90Z-1
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- Mfr.Part #
- STD2NK90Z-1
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 2.1A IPAK
- Stock
- 3,066
- In Stock ：
- 3,066
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Resistance :
- 6.5Ohm
- Number of Terminations :
- 3
- Base Part Number :
- STD2N
- Vgs (Max) :
- ±30V
- Pulsed Drain Current-Max (IDM) :
- 8.4A
- Mount :
- Through Hole
- Power Dissipation-Max :
- 70W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 27nC @ 10V
- Fall Time (Typ) :
- 40 ns
- Turn-Off Delay Time :
- 43 ns
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 2.1A Tc
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- Rds On (Max) @ Id, Vgs :
- 6.5 Ω @ 1.05A, 10V
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 485pF @ 25V
- Gate to Source Voltage (Vgs) :
- 30V
- Additional Feature :
- AVALANCHE RATED
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Number of Pins :
- 3
- Drain to Source Breakdown Voltage :
- 900V
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin (Sn)
- Series :
- SuperMESH™
- Rise Time :
- 11ns
- JESD-609 Code :
- e3
- Factory Lead Time :
- 12 Weeks
- Threshold Voltage :
- 3.75V
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 2.1A
- Power Dissipation :
- 70W
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Turn On Delay Time :
- 21 ns
- REACH SVHC :
- No SVHC
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Packaging :
- Tube
- Datasheets
- STD2NK90Z-1
N-Channel Tube 6.5 Ω @ 1.05A, 10V ±30V 485pF @ 25V 27nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
STD2NK90Z-1 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 485pF @ 25V.This device conducts a continuous drain current (ID) of 2.1A, which is the maximum continuous current transistor can conduct.Using VGS=900V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 900V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 43 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 8.4A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 21 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.Activation of any electrical operation happens at threshold voltage, and this transistor has 3.75V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
STD2NK90Z-1 Features
a continuous drain current (ID) of 2.1A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 43 ns
based on its rated peak drain current 8.4A.
a threshold voltage of 3.75V
STD2NK90Z-1 Applications
There are a lot of STMicroelectronics
STD2NK90Z-1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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