STD2NK70Z-1

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

30V

Power Dissipation-Max :

45W Tc

Drain to Source Breakdown Voltage :

700V

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Rds On (Max) @ Id, Vgs :

7 Ω @ 800mA, 10V

Current - Continuous Drain (Id) @ 25°C :

1.6A Tc

Element Configuration :

Single

Series :

SuperMESH™

Power Dissipation :

45W

Avalanche Energy Rating (Eas) :

110 mJ

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±30V

Turn-Off Delay Time :

20 ns

RoHS Status :

ROHS3 Compliant

Rise Time :

17ns

Fall Time (Typ) :

35 ns

Base Part Number :

STD2N

Packaging :

Tube

Terminal Finish :

Matte Tin (Sn) - annealed

Mounting Type :

Through Hole

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

280pF @ 25V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Number of Terminations :

3

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Additional Feature :

AVALANCHE RATED

FET Type :

N-Channel

Turn On Delay Time :

7 ns

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

11.4nC @ 10V

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

1.6A

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

30

Drain-source On Resistance-Max :

7Ohm

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

6.4A

Number of Pins :

3