STD2NK60Z-1

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

FET Type :

N-Channel

Width :

2.4mm

Packaging :

Tube

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

3

Drain-source On Resistance-Max :

8Ohm

Base Part Number :

STD2N

Mounting Type :

Through Hole

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

6A

Series :

SuperMESH™

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Vgs (Max) :

±30V

Transistor Application :

SWITCHING

Power Dissipation-Max :

45W Tc

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Length :

6.6mm

Radiation Hardening :

No

Terminal Finish :

Matte Tin (Sn) - annealed

Mount :

Through Hole

Number of Elements :

1

Height :

6.2mm

Fall Time (Typ) :

25 ns

Continuous Drain Current (ID) :

1.4A

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

3.75V

Power Dissipation :

45W

Rds On (Max) @ Id, Vgs :

8 Ω @ 700mA, 10V

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

1.4A Tc

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Turn-Off Delay Time :

22 ns

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Rise Time :

30ns

Drain to Source Breakdown Voltage :

600V

Avalanche Energy Rating (Eas) :

90 mJ

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

170pF @ 25V

Turn On Delay Time :

8 ns

Time@Peak Reflow Temperature-Max (s) :

30

Pin Count :

3

Gate to Source Voltage (Vgs) :

30V