STD2LN60K3
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- Mfr.Part #
- STD2LN60K3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N CH 600V 2A DPAK
- Stock
- 17,444
- In Stock ：
- 17,444
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 3
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Factory Lead Time :
- 12 Weeks
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 2A Tc
- Continuous Drain Current (ID) :
- 2A
- Rise Time :
- 8.5ns
- Vgs (Max) :
- ±30V
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 21 ns
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Gate to Source Voltage (Vgs) :
- 30V
- Rds On (Max) @ Id, Vgs :
- 4.5 Ω @ 1A, 10V
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Drain to Source Breakdown Voltage :
- 600V
- Input Capacitance (Ciss) (Max) @ Vds :
- 235pF @ 50V
- Power Dissipation-Max :
- 45W Tc
- Base Part Number :
- STD2LN60
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation :
- 45W
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 10V
- Series :
- SuperMESH3™
- Lead Free :
- Lead Free
- Turn-Off Delay Time :
- 23.5 ns
- Datasheets
- STD2LN60K3
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N-Channel Tape & Reel (TR) 4.5 Ω @ 1A, 10V ±30V 235pF @ 50V 12nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD2LN60K3 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 235pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 2A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 23.5 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
STD2LN60K3 Features
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 23.5 ns
STD2LN60K3 Applications
There are a lot of STMicroelectronics
STD2LN60K3 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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