STD2HNK60Z
- Mfr.Part #
- STD2HNK60Z
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 2A DPAK
- Stock
- 3,621
- In Stock :
- 3,621
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 12 Weeks
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 2A
- Rds On (Max) @ Id, Vgs :
- 4.8 Ω @ 1A, 10V
- Number of Terminations :
- 2
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Power Dissipation :
- 45W
- Gate to Source Voltage (Vgs) :
- 30V
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 13 ns
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 10V
- JESD-30 Code :
- R-PSSO-G2
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 600V
- Fall Time (Typ) :
- 50 ns
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~150°C TJ
- Series :
- SuperMESH™
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Part Number :
- STD2HNK
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Pulsed Drain Current-Max (IDM) :
- 8A
- Vgs (Max) :
- ±30V
- RoHS Status :
- ROHS3 Compliant
- Resistance :
- 4.8Ohm
- Rise Time :
- 30ns
- Power Dissipation-Max :
- 45W Tc
- JEDEC-95 Code :
- TO-252AA
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Turn On Delay Time :
- 10 ns
- Current - Continuous Drain (Id) @ 25°C :
- 2A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Input Capacitance (Ciss) (Max) @ Vds :
- 280pF @ 25V
- FET Type :
- N-Channel
- Lead Free :
- Lead Free
- Drain Current-Max (Abs) (ID) :
- 2A
- Pin Count :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Datasheets
- STD2HNK60Z
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N-Channel Tape & Reel (TR) 4.8 Ω @ 1A, 10V ±30V 280pF @ 25V 15nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD2HNK60Z MOSFET Description
To satisfy the increasing need for a high-voltage power switching design, the STD2HNK60Z power MOSFET is the proper and pertinent choice for broad applications. To start with, this MOSFET presents an amazing low on-resistance characteristic of 4.8 Ω (max.). And it's got a 2 A continuous current driving capability while its total power dissipation can be added up to 45 W under 25 ℃ operating temperature.
STD2HNK60Z MOSFET Features
-
Gate charge minimized
-
100% avalanche tested
-
Extremely high dv/dt capability
-
Improved ESD ability
-
New high voltage benchmark
STD2HNK60Z MOSFET Applications
-
Switching Applications
-
Automotive
-
eMobility
-
Onboard charger
-
DC-DC
-
Motor control
-
Battery Protection
-
Load Management
-
Portable Devices
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